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High-temperature Dual-chamber Molecular Beam Epitaxy (MBE) system for Graphene and hBN

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The standard dual GENxplor MBE system has been specially modified by Veeco to achieve growth temperatures of up to 1850 oC (thermocouple temperatures) in ultra-high vacuum conditions and is capable of growth on substrates of up to 3 inches in diameter. The growth chambers have a vertical configuration with the substrate heater mounted above the sources.

Model: GENxplor

Manufacturer: Veeco, USA



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