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High-temperature Dual-chamber Molecular Beam Epitaxy (MBE) system for Graphene and hBN

More information.

The standard dual GENxplor MBE system has been specially modified by Veeco to achieve growth temperatures of up to 1850 oC (thermocouple temperatures) in ultra-high vacuum conditions and is capable of growth on substrates of up to 3 inches in diameter. The growth chambers have a vertical configuration with the substrate heater mounted above the sources.

Model: GENxplor

Manufacturer: Veeco, USA

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