These are load locked RIE tools with cooled / heated stages and viewing ports with interferometers to monitor the etch depth. An ICP source is used for high density plamas for deep etching of semiconductor materials. Details
Gases: Cl2, BCl3, HBr, SiCl4, CH4, CF4, O2, N2, Ar, low flow O2, H2
Materials etched: III-V etching, GaAs, AlGaAs, InGaAs, InP, GaN, AlGaN, high-K, low damage nitride, Au, Pt, Pd, Al, Ti
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