The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the materiala??s etched profile can achieve high anisotropy. The DP06 RIE80+ system is configured for multimaterial etching like silica, silicon nitride, polymer, III-V based, semiconductor-metal, polysilicon and amorphous silicon.
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