Maximum substrate / wafer size of 150 mm
Gaussian beam step and exposure writing strategy
LaB6 filament and 20 keV, 50 keV and 100 keV operation
10 MHz pattern generator
Writing field sizes of 560 x 560 µm at 100 keV and 800 x 800 µm at 50 keV
Laser interferometer stage with 5 nm resolution
Multi-substrate load lock
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