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Oxford Plasma Pro System 100 Cobra ICP
Plasma dry etching with the following gases:CHF3, SF6, Ar, O2, SiCl4, Cl2, BCl3 , Load-locked sample exchange for fast processing, Wafers up to 150 mm in diameter, Wafer temperatures from 0-400 °C.
Part of Organization: Physics
Contact Stephen Wedge
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