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AVT PEO 601 Oxidation Furnace

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Capability to grow thermal SiO2 and SiOxN1-x up to 1100 oC at ramp rates up to 100 oC/min for a wafer batch or 20 oC/s for single wafers. The system can take 25 off 100 mm diameter wafers. Gases include O2, N2O, N2 and forming gas.
Part of Organization: James Watt Building

Contact Professor Douglas Paul Douglas.Paul@ glasgow.ac.uk

Issues with this record should be reported to Linsey.Robertson@glasgow.ac.uk